Semiconductor device with a tunnel diode and method of manufacturing same
US6242762A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 1998 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | May 13, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/979
Abstract
A semiconductor device with a tunnel diode (23) is particularly suitable for various applications. Such a device comprises two mutually adjoining semiconductor regions (2, 3) of opposed conductivity types and having doping concentrations which are so high that breakdown between them leads to conduction by means of tunnelling. A disadvantage of the known device is that the current-voltage characteristic is not yet steep enough for some applications. In a device according to the invention, the portions (2A, 3A) of the semiconductor regions (2, 3) adjoining the junction (23) comprise a mixed crystal of silicon and germanium. It is surprisingly found that the doping concentration of both phosphorus and boron are substantially increased, given the same amount of dopants being offered as during the formation of the remainder of the regions (2, 3). The tunnelling efficiency is substantially improved as a result of this, and also because of the reduced bandgap of said portions (2A, 3A), and the device according to the invention has a much steeper current-voltage characteristic both in the forward and in the reverse direction. This opens perspectives for inter alia an attractive application…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.