Semiconductor device having oblique portion as reflection
US6242792A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 1999 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | May 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser trimming is favorably performed by a strengthened laser beam energy. A level difference portion having a taper portion that is oblique with respect to the thicknesswise direction of a semiconductor substrate is formed at a surface of a semiconductor substrate. An insulating film is formed thereon and has its surface made flat, and then the thin film element is formed thereon. Thereafter, laser trimming is performed with respect to the thin film resistor. As a result, a state of interference between incident laser beam and reflected laser beam reflected from the interface between the semiconductor substrate and the insulating film is varied to thereby enable the production of a zone where laser beam energy is strengthened and a zone where laser beam energy is weakened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.