Spin valve magneto-resistance effect head and a magnetic storage apparatus using the same
US6243241A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 10, 1998 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | Jun 10, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A spin valve magneto-resistance effect head includes a spin valve film, a pair of magnetic shield members, and a support member. Each of the pair of magnetic shield members is arranged opposite to each surface of the spin valve film. The support member is arranged between the spin valve film and the pair of magnetic shield members for setting the relative position therebetween (D1>D2) in order to form a predetermined gap having non-conductivity therebetween. The change of resistivity based on giant magneto-resistance effect for signal magnetic field applied from a storage medium is output from the spin valve film as voltage drop in response to sense current applied from an outside. The antiferromagnetic layer is provided in order to magnetize the pinned layer to a direction orthogonal to the direction of the sense current by forming magnetic field by an exchange coupling to the pinned layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.