Semiconductor light-emitting device and method of manufacturing the same
US6245588A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 11, 1999 |
| Grant date | Jun 12, 2001 |
| Priority date | — |
| Expiry date | May 11, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
Abstract
A semiconductor light-emitting device includes a substrate formed of an AlGaAs-base semiconductor material. A light-emitting layer forming portion of an AlGaInP-base compound semiconductor material is formed on the substrate so as to provide a light emitting layer. On the surface of the light-emitting layer forming portion, an window layer of an AlGaAs-base semiconductor material is provided. An upper electrode is formed on the upper-side layer in electrical connection therewith, while a lower electrode formed on the substrate in electrical connection therewith. The light-emitting layer forming portion is of an overlaid structure formed by a clad layer formed in a first conductivity type on the substrate. An active layer is formed on the clad layer to have a composition with a lower band gap energy than that of the clad layer. A clad layer is formed in a second conductivity type on the active layer to have the same composition as the first-conductivity clad layer. The light emitted by the light-emitting layer forming portion and traveling toward the substrate is absorbed less by the substrate, which is rather reflected for outer radiation on the light radiation side. As a result, t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.