Zirconia-containing transparent and conducting oxides

US6246071A · kind A · utility

Assignee

• United States of America as represented by the Secretary of the Air Force · US

Inventors

• Syed B. Qadri · Fairfax Station, US
• Earl F. Skelton · Washington, US
• Alberto Pique · Crofton, US
• James Horwitz · Fairfax, US
• Douglas B. Chrisey · Bowie, US
• Heungsoo Kim · Fairfax, US

Key dates

• Filing date: Sep 23, 1999
• Grant date: Jun 12, 2001
• Expiry date: Sep 23, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/862

Abstract

This invention pertains to a device of a substrate and a ZrO.sub.2 -based semiconductor disposed thereon and a method for depositing the semiconductor on the substrate. The semiconductor is typically in the form of a film of 1-20 weight % ZrO.sub.2 and 99-80 weight % In.sub.2 O.sub.3 or SnO.sub.2 . The semiconductor is tunable in terms of optical transmission and electrical conductivity. Its transmission is in excess of about 80% over the wavelength range of 400-900 nm and its resistivity is from about 1.3.times.10.sup.-3 .OMEGA.-cm to about 6.5.times.10.sup.-2 .OMEGA.-cm. The deposition method is characterized by depositing in a chamber the semiconductor on a substrate by means of a physical vapor deposition whole maintaining a small oxygen pressure in the chamber.