Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6248459A · kind A · utility
36Cited by
11References
36Claims
0Family size
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Key dates
| Filing date | Mar 22, 1999 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | Mar 22, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface is an atomic layer of silicon, oxygen, and a metal in the form XSiO.sub.2, where X is a metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.