Patent · US Expired

Method for design and development of a semiconductor laser device

US6248604A · kind A · utility

5Cited by
14References
32Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 14, 1999
Grant dateJun 19, 2001
Priority date
Expiry dateSep 14, 2019

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/0014
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method for testing semiconductor laser devices is described. The method includes testing a monolithically integrated semiconductor laser device via electrical contact testing and/or far field testing. These tests will provide the total performance of the entire device. Further, the method includes accurate cleaving off of a portion of the laser device and re-testing to determine the relative performance of the remainder of the device. Through comparison of the test and re-test results, it is possible to reduce the design cycle for monolithically integrated semiconductor laser devices by detecting design flaws and imperfections or by ascertaining a more advantageous design.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.