Method of growing thin film electroluminescent structures

US6248605A · kind A · utility

Assignee

• PLANAR SYSTEMS, INC. · US

Inventors

• Gitte Harkonen · Espoo, FI
• Tomi Kervinen · Espoo, FI
• Erkki Soininen · Espoo, FI
• Runar Törnqvist · Helsinki, FI
• Kirsi Vasama · Järvenpää, FI
• Mario Glanz · Berlin, DE
• Herbert Schumann · Berlin, DE

Key dates

• Filing date: Jun 2, 1999
• Grant date: Jun 19, 2001
• Expiry date: Jun 2, 2019

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/46
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention concerns a method of growing a cerium-doped SrS phosphor layer by the Atomic Layer Epitaxy-method. According to the invention an organometallic cerium compound containing at least one cyclopentadienyl type ligand is used as a precursor for the dopant cerium. The cyclopentadienyl type cerium compounds can be used as ALE precursors at about 400.degree. C. substrate temperatures without any observable thermal decomposition during processing.