Method for manufacturing semiconductor light emitting device
US6248607A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 7, 1999 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | Sep 7, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
Abstract
In a method for manufacturing semiconductor light emitting device, when a gallium nitride based compound semiconductor layers which include at least an n-type layer and p-type layer and which form a light emitting layer, are laminated on a substrate and heat treatment is performed for activation of the p-type layer of the laminated semiconductor layers, the heat treatment is performed under an atmosphere including oxygen. With this arrangement, the heat treatment for activating the p-type layer of the laminated semiconductor layers comprising gallium nitride based compound semiconductor can be performed in a short time and moreover to reliably perform activation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.