Gated semiconductor device
US6249023A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 17, 1999 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | Aug 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A gated semiconductor device comprising a substrate defining an active surface area including source regions, and a series of gates formed adjacent and insulated from the source regions. A source electrode contacts the source regions. A termination extends around the periphery of the active surface area, The termination comprises a gate electrode and a layer of conductive material electrically connected between the gate electrode and the gates. The layer of conductive material extends to the source electrode and incorporates a series of regions which are alternately N and P type so as to define a series of breakdown diode junctions distributed around the active surface area and interposed between tie gate electrode and source electrode, In normal operation gate current flows through portions of the conductive layer which do not incorporate diode junctions. In the event that the gate/source voltage exceeds a predetermined level, the diode junctions break down, shorting the gate to the source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.