Semiconductor device having a high-dielectric capacitor
US6249040A · kind A · utility
7Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1999 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | Nov 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-dielectric capacitor is formed by using a Ru lower electrode having a (002)-oriented principal surface, by depositing thereon a Ta.sub.2 O.sub.5 film such that the Ta.sub.2 O.sub.5 film has a (100)-principal surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.