Protection of a vertical MOS transistor associated with measurement cells
US6249409A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 15, 1998 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | Dec 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a device of protection of a monolithic component including a MOS-type vertical diffused power transistor formed of a great number of identical cells, and a measurement transistor formed of a smaller number of cells identical to those of the power transistor, the drains and the gates of all cells being common, an inductive load being connected to the source of the power transistor, a short-circuiting circuit connected between the source of the power transistor and the source of the measurement transistor, and a control circuit that turns on the short-circuiting circuit when the power transistor turns off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.