Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield
US6251241A · kind A · utility
10Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2000 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Apr 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.