Semiconductor wafer etching method
US6251542A · kind A · utility
5Cited by
9References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1998 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Nov 10, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/928
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.