Maskless photolithography system that digitally shifts mask data responsive to alignment data
US6251550A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 7, 1999 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Jul 7, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/704
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A maskless photolithography system for use in photolithography of a desired mask pattern on a photo resist coated subject includes a light source for projecting a collimated beam of light, a first lens system, and a pattern generator. The pattern generator is for generating the desired mask pattern according to prescribed mask pattern information. Upon receipt of the prescribed mask pattern information, the pattern generator generates a resident mask pattern therein to be imaged upon the photo resist coated subject. A mask pattern design system is provided for outputting the prescribed mask pattern information corresponding to the desired mask pattern to the pattern generator. The maskless photolithography system further includes a second lens system and a subject stage. The subject stage is provided for receiving the subject thereon during a photolithographic exposure, wherein light from the light source is directed through the first lens system, from the first lens system to the pattern generator and emanating from the pattern generator with the desired mask pattern, into the second lens system, and lastly onto the photo resist coated subject.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.