Shallow trench isolation formation with sidewall spacer
US6251749A · kind A · utility
5Cited by
13References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1999 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Sep 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An isolation structure which protrudes above the semiconductor surface and sidewall spacers which smooth the topography over said isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.