Photo-conductive switch having an improved semiconductor structure
US6252221A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1999 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Jun 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A PCS that comprises a photo-conductive layer of NB material sandwiched between a top confinement layer and a bottom confinement layer. Both confinement layers are layers of WB material. NB material and WB material are semiconductor materials. NB material has a smaller band-gap energy than WB material. The top confinement layer and the photo-conductive layer have opposite conductivity types. A first electrode and a second electrode, separated from each other by a gap and are located on the surface of the top confinement layer remote from the photo-conductive layer. The photo-conductive layer provides a low-resistance conduction path between the electrodes when the photo-conductive layer is illuminated with incident light of an appropriate wavelength and intensity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.