GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6252261A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1999 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Jun 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaN crystal film having a mask patterned in a stripe for forming multiple growing areas on a sapphire substrate and coalesced GaN crystals covering the mask dividing the areas, grown from the neighboring growing areas, comprising defects where multiple dislocations along with the stripe are substantially aligned with the normal line of the substrate, in the crystal areas over the mask, and dislocations propagating in substantially parallel with the substrate surface while, in the vicinity of the areas where the crystals are coalesced over the mask, propagating substantially in the normal line of the substrate surface, and a manufacturing process therefor. According to this invention, there can be provided a GaN crystal film in which strain, defects and dislocations are reduced and which tends not to generate cracks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.