Field effect transistor with comb electrodes and via holes
US6252266A · kind A · utility
12Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1999 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Jul 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with a field-effect transistor for use at a high frequency, higher than the microwave frequency band, has a pair of grounding electrodes, each having a via hole with an elliptical cross-section, the major axis of which is parallel to a direction in which source electrodes are arranged. Instead of the elliptical via hole, each grounding electrode may have via holes through which the grounding electrode is grounded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.