Process for modulating interferometric lithography patterns to record selected discrete patterns in photoresist
US6255038A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 16, 1999 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Feb 16, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A double exposure process is disclosed whereby a first exposure produced by conventional photolithographic techniques generates a latent negative image in a photoresist etch mask layer (22), the image subsequently employed to modulate a second exposure generated by the multiple beam interferometric lithography technique. Periodic surface relief structures (80) patterned by the second exposure and formed after development of the exposed photoresist material, are restricted to regions (52) defined by the initial exposure, with the photoresist material (54) outside these regions remaining unmodulated, or devoid of the periodic structures (80), and suitable for use as a mask in a subsequent etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.