Light-emitting diode device and method of manufacturing the same
US6255129A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 7, 2000 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Sep 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light-emitting diode device, such as a blue, green, blue-green light-emitting diode, with a one-wire-bonding characteristic and the method of manufacturing the same have been disclosed. The light-emitting diode device has a GaN-based semiconductor laminated structure formed on an insulating substrate. The GaN-based semiconductor laminated structure includes an n-type layer on its bottom side, a p-type layer on its top side, and an active layer, for generating light, sandwiched between the n-type and p-type layers. An annular isolation portion such as a trench or a high resistivity portion formed by ion implantation is formed in the GaN-based semiconductor laminated structure to separate the p-type layer into a central p-type layer and a peripheral p-type layer and to separate the active layer into a central active layer and a peripheral active layer. A p-type electrode is formed on the central p-type layer without electrically connecting to the peripheral p-type layer. A conductive layer is coated to cover the sidewalls and the bottom surface of the insulating substrate and to ohmically contact with the n-type layer. Preferably, an adhesion layer is sandwiched between the sidewal…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.