Electro optical devices with reduced filter thinning on the edge pixel photosites and method of producing same
US6255133A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2000 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Aug 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
The present invention relates to electro optical devices with a reduced filter thinning on the edge pixels and a method for reducing the thinning of filter layers on the pixels closest to the edge of an electro optical device such as a photosensitive chip, as would be used, for example, in a full-color digital copier or scanner. A semiconductor wafer includes a main surface defining a plurality of chip areas and tab regions separated by grooves, wherein the chip areas include inner photosites, outer photosites and bonding pads. A plurality of dams are deposited over the main surface in the tab regions, and a clear layer is deposited over the main surface exclusive of the bonding pads. Alternatively, a clear layer is deposited over the main surface exclusive of the bonding pads, and a plurality of tabs is then deposited in the tab regions on the main surface. A first primary color filter layer is deposited over at least first inner photosite and first outer photosite, and the first primary color filter layer transmits a primary color.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.