Method for modifying a film forming surface of a substrate on which a film is to be formed, and method for manufacturing a semiconductor device using the same
US6255230A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 23, 1999 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Nov 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for modifying a film-forming surface of a substrate, which is capable removing a base surface dependency in forming a film on the film-forming surface of the substrate prior to formation of a film by a thermal CVD method using a reactant gas containing an ozone-containing gas containing ozone (O.sub.3) in oxygen (O.sub.2) and Tetra-Ethyl-Ortho-Silicate. The method comprises the step of modifying the film-forming surface 12a of the substrate 102 by allowing any one of ammonia, hydrazine, an amine, gases thereof and aqueous solutions thereof to contact with the surface of the substrate before forming an insulating film 13 on the surface 12a of the substrate 102.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.