Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element
US6255669A · kind A · utility
23Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1999 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Apr 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/052
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.