Semiconductor P-I-N detector

US6255708A · kind A · utility

Inventors

• Rengarajan Sudharsanan · Santa Clarita, US
• Nasser H. Karam · Tustin, US

Key dates

• Filing date: Oct 10, 1997
• Grant date: Jul 3, 2001
• Expiry date: Oct 10, 2017

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/543

Abstract

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.