VCSEL structure insensitive to mobile hydrogen
US6256333A · kind A · utility
6Cited by
4References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 12, 1997 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Dec 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An active region of a VCSEL at one (i.e., n doped) end having an expanded effectively undoped region, and another (i.e., p doped) end having a significantly doped region up to or even including a portion of the active region. A previous way had heavy doping of the n and p doped regions up to the active region, at least close to it or even partially into it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.