Method for fabricating oxide film
US6258731A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 19, 1999 |
| Grant date | Jul 10, 2001 |
| Priority date | — |
| Expiry date | Apr 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a very thin oxide film, such as a gate oxide film of a MOS transistor, by oxidizing a substrate, which method can accurately and easily control the thickness of the oxide film to a desired value. The method comprises controlling thickness of the oxide film to be formed, by adjusting partial pressure of oxygen in an ambient including oxygen, without changing temperature of oxidation of said substrate and time of oxidation of said substrate. Alternatively, the method comprises controlling thickness of the oxide film to be formed, by adjusting only pressure of an oxidizing ambient, without changing temperature of oxidation of said substrate and time of oxidation of said substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.