Solar cell
US6259016A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2000 |
| Grant date | Jul 10, 2001 |
| Priority date | — |
| Expiry date | Feb 29, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
Abstract
The present invention includes a substrate, a lower electrode film, a p-type semiconductor layer (a second semiconductor layer), an n-type semiconductor layer (a first semiconductor layer), an upper electrode film and an anti-reflection film, which are stacked sequentially on the substrate in this order, and an interconnection electrode formed on the upper electrode film. The first semiconductor layer is free from Cd, and the second semiconductor layer is a light-absorption layer. The band gap Eg.sub.1 of the first semiconductor layer and the band gap Eg.sub.2 of the second semiconductor layer satisfy a relationship: Eg.sub.1 >Eg.sub.2. The electron affinity .chi..sub.1 (eV) of the first semiconductor layer and an electron affinity .chi..sub.2 (eV) of the second semiconductor layer satisfy a relationship: 0.ltoreq.(.chi..sub.2 -.chi..sub.1)<0.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.