Monolithic multiple wavelength VCSEL array
US6259121A · kind A · utility
17Cited by
13References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1999 |
| Grant date | Jul 10, 2001 |
| Priority date | — |
| Expiry date | Sep 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An array of n-wavelength vertical cavity surface emitting lasers (VCSELs) can be grown with precise and repeatable wavelength control. First, a foundation VCSEL structure is grown on a substrate. Next, n-paired layers of AlGaAs and InGaP are grown, where n is the desired number of different wavelengths. Next, one of the n regions is masked and etched. The steps of masking and etching are repeated until all n regions are etched. Finally, the upper VCSEL structure is grown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.