Semiconductor device having a fuse layer
US6259147A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1999 |
| Grant date | Jul 10, 2001 |
| Priority date | — |
| Expiry date | Jan 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: an insulation layer; a fuse layer extending on the insulation layer in one direction and disconnected through light radiation to control a redundant circuit; a pseudo fuse layer on the insulation layer along at least one side of the fuse layer; another insulation layer covering the fuse layer and the pseudo fuse layer; and a protection film formed on another insulation layer and having an opening in a region opposite to the fuse layer. Fuse layers having a spacing of less than 4 .mu.m or 4.5 to 5.5 .mu.m. Such a structure allows a semiconductor device with a fuse layer capable of being disconnected reliably and providing a smaller blow trace.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.