Method of fabricating solid-state image sensor
US6261860A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 30, 1999 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Mar 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of fabricating a solid-state image sensor, comprising the step of carrying out heat treatment before formation of a gate of the solid-state image sensor, a maximum temperature in the heat treatment being in the range of 1000 to 1200 degrees centigrade both inclusive, the step of carrying out heat treatment further including the steps of (a) carrying out lamp-up at least twice, and (b) carrying out lamp-down at least twice. The method makes it possible to grow BMD (Bulk-Micro-Defect) in a wafer in a greater size than a size of BMD to be grown in accordance with a conventional method, ensuring reduction in illuminated or white defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.