High quality, semi-insulating gallium nitride and method and system for forming same

US6261931A · kind A · utility

Assignee

• The Regents of the University of California · US

Inventors

• Stacia Keller · Midland School, US
• Bernd Keller · Lompoc, US
• Umesh Mishra · Montecito, US
• Steven P. DenBaars · Goleta, US

Key dates

• Filing date: Jun 19, 1998
• Grant date: Jul 17, 2001
• Expiry date: Jun 19, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for growing high-quality gallium nitride over a substrate is disclosed. The method comprises growing first layer with a high dislocation density over the substrate, a second layer having a high number of point defects and a reduced dislocation density as compared to the dislocation density of the first layer over the first layer, and a third layer having a reduced number of point defects as compared to the second layer over the second layer. The resulting gallium nitride is semi-insulating, which inhibits parasitic current flow and parasitic capacitive effects, yet it not so insulating that electron flow in adjacent transistor channels is inhibited.