Thermal type infrared sensing device, fabrication method for thermal type infrared sensing device, and infrared imaging system and infrared imaging apparatus
US6262418A · kind A · utility
5Cited by
4References
34Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 22, 1998 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Oct 22, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/34
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thermal type infrared sensing device has; a plurality of light-receiving electrodes for outputting a change of surface charge associated with a polarization that occurs in a dielectric when subjected to infrared radiation; and a plurality of compensation electrodes, corresponding one for one to plurality of light-receiving electrodes, for compensating the outputs of corresponding light-receiving electrodes, and wherein plurality of compensation electrodes are formed on a different substrate from a substrate on which plurality of light-receiving electrodes are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.