Monolithic protected rectifying bridge
US6262443A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1997 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Aug 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
Abstract
The present invention relates to a semiconducting structure constituting a protected rectifying bridge implemented in an N-type semiconductor substrate divided into first, second, and third wells by vertical P-type isolating walls, in which the rear surface of the substrate is coated with a first metallization and in which each of the first and second wells includes a vertical diode and a vertical Shockley diode. The third well includes a P-type isolating layer on its rear surface side in contact with the first metallization and, on its front surface side, two lateral diodes, each of which is formed between a P-type region and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.