Highly-doped P-type contact for high-speed, front-side illuminated photodiode

US6262465A · kind A · utility

Assignee

• PICOMETRIX, LLC · US

Inventors

• Steven Williamson · Henrietta, US
• Robert N. Sacks · Glastonbury, US
• Janis A. Valdmanis · Columbus, US
• Kadhair Al Hemyari · Dearborn, US

Key dates

• Filing date: Sep 25, 1998
• Grant date: Jul 17, 2001
• Expiry date: Sep 25, 2018

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

A semiconductor p-i-n photodiode having a substrate, an n layer coupled to the surface of said substrate, an i layer coupled to the surface of said n layer, and a carbon doped p layer coupled to the surface of said i layer.