Parallel plate structure provided with PZT thin-film bimorph and method of fabrication thereof
US6262516A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1999 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Aug 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/077
Abstract
A parallel plate structure (1) is provided with a pair of bimorph piezoelectric elements (2) and prismatic insulation spacers (3) inserted between the piezoelectric elements (2) at the upper and lower ends thereof for cementing the piezoelectric elements (2) together via the spacers (3). Each piezoelectric element (2) comprises a planar base material (4) of titanium, PZT thin films (5) formed on both sides of the base material (4) by the hydrothermal method, and electrode films (6) formed on the PZT thin films (5). The base material (4) is 20 .mu.m thick and the PZT thin films (5) are several pm thick, while the aluminum electrode films (6) are several um thick.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.