Single crystal processing by in-situ seed injection
US6264742A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Jul 29, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1016
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system and method for processing crystals is disclosed. The system includes a receiver tube for receiving semiconductor granules. The granules are then directed to a chamber defined within an enclosure. The chamber maintains a heated, inert atmosphere with which to melt the semiconductor granules into a molten mass. A nozzle, located at one end of the chamber, creates droplets from the molten mass, which then drop through a long drop tube. As the droplets move through the drop tube, they form spherical shaped semiconductor crystals. The drop tube is heated and the spherical shaped semiconductor crystals may be single crystals. An inductively coupled plasma torch positioned between the nozzle and the drop tube melts the droplets, but leaving a seed in-situ, or the droplets may be melted and a seed injected in-situ. The seed can thereby facilitate crystallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.