Patent · US Expired

Apparatus and method for sputtering

US6264803A · kind A · utility

8Cited by

4References

10Claims

0Family size

Inventors

Steven V. Morgan · Windsor, US
Johan Vanderstraeten · Drongen, BE
Erwin Vanderstraeten · Gentbrugge, BE
Guy Gobin · Oostende, BE

Key dates

Filing date	Feb 7, 1997
Grant date	Jul 24, 2001
Priority date	—
Expiry date	Feb 7, 2017

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C14/35
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Material utilization and process stability for a rotating cylindrical magnetron target used in a sputtering system are improved by incorporation of a second magnet structure or "race track", allowing the power density on the target surface to be reduced by approximately 50% for any given point where magnetic confinement of the plasma exists. Offsetting one race track relative to the other along the longitudinal axis of the target reduces the power density at each turn-around area (relative to the longitudinal area). Modestly increasing the target material thickness at the ends of the target allows nearly all of the material between the turn-around areas to be sputtered.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.