In-wafer testing of DFB semiconductor lasers
US6265237A · kind A · utility
3Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Dec 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing and testing a laser device that facilitates in-wafer testing of the laser device includes forming the laser device on a wafer and forming a light detecting device on the wafer adjacent to the laser device. The laser device should include a grating. The method further includes causing the laser device to lase while in the wafer and detecting light generated from the laser device with the light detecting device. Finally, the method includes obtaining an electro-optic parameter of the laser device from the detected light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.