Method of manufacturing semiconductor device and mask for forming thin film pattern
US6265324A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | May 20, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/042
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A mask 11 for vapor deposition is made of glass. Through-holes 15 are formed in the glass mask 11 so that they make a prescribed pattern on the surface of a semiconductor substrate 4. The peripheral wall of the through-hole is tapered so that the opening face 15b from which evaporated atoms are introduced is larger than the opening face 15a facing the deposition surface of the semiconductor substrate. The evaporated metal atoms having flied aslant toward the opening face 15b from which the evaporated atoms are introduced can pass through the through-hole 14 so that the evaporated metal atoms are deposited on the deposition surface of the semiconductor substrate. A desired thin film pattern inclusive of an electrode pattern can be easily formed on the surface of a semiconductor substrate, thereby improving the production yield of a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.