Method for forming an insulating film on semiconductor substrate surface and apparatus for carrying out the method
US6265327A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 17, 1998 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Jun 17, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/961
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0.degree. C. to 700.degree. C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.