Semiconductor device and method for manufacturing the same
US6265733A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1997 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Nov 13, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in <011> direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.