Opto-electronic component made from II-VI semiconductor material

US6265734A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Frank Fischer · Pfaffen-Schwabenheim, DE
• Hans-Jürgen Lugauer · Sinzing, DE
• Thomas Litz · Würzburg, DE
• Gottfried Landwehr · Würzburg, DE
• Andreas Waag · Würzburg, DE

Key dates

• Filing date: May 1, 1998
• Grant date: Jul 24, 2001
• Expiry date: May 1, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3216
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Component having an active layer (4), barrier layers (3, 5), and, if appropriate, a buffer layer (2), of which layers at least one contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTE/ZnSe or of BeTe/ZnCdSe. When using an active layer of ZnSe on a substrate (1) of Gaps, matching with low electrical resistance is achieved between the III-V materials and the II-VI materials by means of a pseudo-graded buffer layer (2) including a beryllium-containing chalcogenide.