Light emitter
US6265823A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1998 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Jul 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8264
Abstract
The light emitter is fabricated from a silicon substrate (2) that has a layer of porous silicon (3) on its upper surface. A hole transporter (4) is applied to the upper surface of the porous silicon (2) and penetrates the channels (3') formed within the porous silicon. An upper semitransparent p-type material such as NiO is used as the upper contact (5) to the hole transporter and a further contact is formed on the base of the silicon wafer (2). The penetration of the hole transporter into the interstices between the silicon particles significantly improves the efficiency of the light emitter by up to two orders of magnitude. The light emitter is particularly suited to use in VLSI and display applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.