Fully integrated broadband RF voltage amplifier with enhanced voltage gain and method
US6265944A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Sep 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45702
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
RF voltage amplifier circuits which have high voltage amplifier gain and input signal frequency range, and a method for boosting the voltage amplifier gain and input signal frequency range in such circuits is provided. A method includes the steps of providing a voltage amplifier having a transistor with the grounded source and the drain connected to a power supply via a resistive load, and providing an integrated inductor for biasing the transistor, having an inductor connecting an input signal terminal to the gate of the transistor and a capacitor connecting the gate and the source of the transistor. The next step includes selecting a resonant frequency of the integrated inductor at a frequency where the voltage amplifier gain is starting to roll-off, for boosting the voltage amplifier gain and the input signal frequency range. The integrated inductor preferably operates at a resonant frequency approximately matching the roll-off frequency of the voltage amplifier. In another embodiment the voltage amplifier has a common emitter (CE) gain stage, a common base (CB) cascade stage directly-coupled to the CE gain stage, and a constant current mirror source. The integrated inductor has…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.