Semiconductor laser device with ridge structure
US6266354A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2000 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Jul 27, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device, including a substrate; a ridge stripe formed on the substrate and including an active layer, an n-cladding layer and p-cladding layer, the n-cladding layer and the p-cladding layer interposing the active layer; in which the ridge stripe has a laser unit which lases. In one embodiment the ridge stripe has a tip portion having a tapered shape, and an angle formed inside the ridge stripe by a bottom surface of the ridge stripe and a side surface of the ridge stripe is in the range of about 60.degree. and about 90.degree.. In one embodiment, the laser device includes a misoriented substrate and the ridge stripe has current blocking layers formed on both sides thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.