Method of manufacturing semiconductor device
US6268298A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1999 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Mar 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, after performing ion-implantation and before forming an oxide film, a silicon substrate is disposed within a furnace to undergo a heat treatment at a temperature equal to or higher than 950.degree. C. for a specific time period (equal to or longer than 15 minutes). When performing the heat treatment and when raising a temperature up to the heat treatment temperature, oxygen is supplied together with nitrogen gas (inert gas). A supply amount of oxygen is controlled to be equal to or less than 5% when raising the temperature up to the heat treatment temperature, and to be equal to or less than 2% when performing the heat treatment. After the heat treatment, the oxidation film is formed. As a result, crystal defects (OSFs) are prevented from being produced on the silicon substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.