Electronic structure comprising high and low voltage transistors, and a corresponding fabrication method

US6268633A · kind A · utility

Assignee

• STMicroelectronics SA

Inventors

• Federico Pio · Brugherio, IT
• Olivier Pizzuto · Gardanne, FR

Key dates

• Filing date: Dec 28, 1998
• Grant date: Jul 31, 2001
• Expiry date: Dec 28, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/49

Abstract

A structure of electronic devices integrated in a semiconductor substrate with a first type of conductivity comprising at least a first HV transistor and at least a second LV transistor, each having a corresponding gate region. Said first HV transistor has lightly doped drain and source regions with a second type of conductivity, and said second LV transistor has respective drain and source regions with the second type of conductivity, each including a lightly doped portion adjacent to the respective gate region and a second portion which is more heavily doped and comprises a silicide layer.