MOSFET predrive circuit with independent control of the output voltage rise and fall time, with improved latch immunity
US6268755A · kind A · utility
21Cited by
5References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1997 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Nov 4, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/00361
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A voltage level shifting circuit (60) and method for accomplishing a voltage level change includes a voltage level shifting circuit (65) to change an input voltage to a shifted voltage level. A second stage (67) is connected between a voltage source at the shifted voltage level (68) and the reference potential. The second stage (67) includes active devices (66,82) that are controlled by the voltage level shifting circuit (65). The second stage (67) also includes slope resistors (86,88) connected in series between the active devices (66,82) of the second stage (67).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.