Low cost shallow trench isolation using non-conformal dielectric material

US6270353A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• John Andrews · Simpsonville, US
• Bao-Tai Hwang · Poughkeepsie, US
• Howard S. Landis · Underhill, US
• Shaw-Ning Mei · Wappingers Falls, US
• James M. Tyler · Lagrangeville, US
• Edward J. Vishnesky · Poughkeepsie, US

Key dates

• Filing date: Jun 7, 1999
• Grant date: Aug 7, 2001
• Expiry date: Jun 7, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76229
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is provided for planarizing a structure such as a shallow trench isolation region on a semiconductor substrate. A semiconductor substrate is provided having raised and lowered regions with substantially vertical and horizontal surfaces. The lowered regions may correspond to trench regions. Filler material such as non-conformal high density plasma oxide may be deposited over the horizontal surfaces to at least a thickness equal to a predetermined height so as to provide raised and lowered regions of the filler material. The raised regions of the filler material may then be selectively removed without removing the filler material in the lowered regions.